General purpose plastic rectifier 1n4001 thru 1n4007 vishay. Mrf150ma transistor, rf power fet, 150w, 150mhz, 50v, ma. The datasheetarchive datasheet search engine author. This pushpullparallel circuit produces a power output of 600 watts across the 2 to 30 mhz band using four rf devices without the added loss and cost of power splitters and combiners. Mrf150 datasheet 150 w, nchannel mos linear rf power fet. Mrf422 datasheet, equivalent, cross reference search. Preliminary ds70590c mrf49xa data sheet ism band subghz rf transceiver. The rf mosfet linerf power fieldeffect transistornchannel enhancementmodedesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 175 mhz. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. Motorola rf device data mrf150 the rf mosfet line nchannel enhancementmode designed primarily for linear largesignal output stages up to150 mhz frequency range. Macom and its affiliates reserve the right to make changes to the products or information contained herein without notice. Superior high order imd specified 50 volts, 30 mhz characteristicsoutput power 30 wattspower gain 18 db typefficiency 40% typ datasheet search, datasheets, datasheet search site for electronic. Discussion in homebrew and kit projects started by k9rrf, nov, 2009. Pdf vrf151 175mhz vrf151 30mhz, 175mhz, mrf151 rf power transistor 30mhz c11rf.
Depended, which mosfet you using, the output power can be in range 600w pep, with 820w drive power. Mrf150 datasheet, mrf150 datasheets, mrf150 pdf, mrf150 circuit. Mrf652210r1 rf power field effect transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Mrf150 inventory, pricing, datasheets from authorized distributors at ecia. Arf1501 microchip technology discrete semiconductor. Arrow electronics guides innovation forward for over 200,000 of the worlds leading manufacturers of technology used in homes, business and daily life. Specified v, 50 mhz characteristics output power 70 w minimum gain 11 db efficiency 50% load mismatch capability at high. Semiconductor reserves the right to make changes at any time without notice in order to improve design. Spice model links, saber model links and library file. Figure 14 is the recommended host pcb footprint for the mrf89xam9a.
I offer pa unit, what you can use in solid state hf linear amplifier dn600. Mosfet model 9 institute of microelectronic systems level 1 mosfet model parameters. Pricing and availability on millions of electronic components from digikey. Motorola mrf150 rf power fet makes it possible to parallel two or more devices a relatively high power levels. This is a guide designed to support user choosing the best model for his goals. Spice model tutorial for power mosfets introduction this document describes sts spice model versions available for power mosfets. Mrf150 rf power fet components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic. This pa unit optimized for mosfet like mrf150, blf177, sd2933, sd2943, sd4933. After starting down the road to station automation by purchasing band decoders, a dx doubler and sixpacks in 2007, i realized that having just one manual tune, tube amp would not allow the station goals to be met.
Specified 50 volts, 30 mhz characteristics output power 150 watts power gain 17 db typ efficiency 45% typ superior high order imd 150 w pep 32 db typ. Spice model tutorial for power mosfets stmicroelectronics. Home ares amp project antenna contest results equipment journal links memberships photos qsl info shack. Designed primarily for linear largesignal output stages up to 150 mhz. Auir0815s library auir0815str library ips1011 library ips1011pbf library ips1011r library ips1011rpbf library ips1011rtrl library ips1011rtrr library. Mrf150 datasheet, mrf150 pdf, mrf150 data sheet, mrf150 manual, mrf150 pdf, mrf150, datenblatt, electronics mrf150, alldatasheet, free, datasheet, datasheets, data. A global provider of products, services, and solutions, arrow aggregates electronic components and enterprise computing solutions for customers and suppliers in industrial and commercial markets. Ism band subghz rf transceiver microchip technology. Typical performance at 400 mhz, 28 vdcoutput power 4. In fact, it explains the features of different model versions both in terms of static and dynamic characteristics. Motorola nchannel mos linear rf power fet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. As i understand it the motorola eb104 circuit was never meant to be a production ready design.
Rf power fieldeffect transistor 150 w, 50 v, 175 mhz nchannel broadband mosfet rev. Mrf212 datasheet, equivalent, cross reference search. Specified 50 volts, 30 mhz characteristics output power 150 watts power gain 17 db typ efficiency 45% typ superior high order imd. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. Motorola order this document semiconductor technical data by mrf422d the rf line npn silicon mrf422 rf power transistor designed primarily for applications as a highpower linear amplifier from 2. I need a pair of mrf 422s for a project that i am working on. Instead helge granberg, the motorola circuits engineer that authored the eb104 engineering bulletin was touting the benefits of their mrf150 power fet over bipolar transistors for hf pushpullparallel based power amplification applications. Mrf150 pdf, mrf150 description, mrf150 datasheets, mrf150. Macom nchannel mos linear rf power fet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Cbdzero bias drainbulk junction capacitance fcbszero bias sourcebulk junction capacitance fmjbulk junction grading coefficient dimensionlesspbbuiltin potential for the bulk junction v. The high gain and broadband performance of this device makes it ideal for largesignal, common source amplifier applications in 26 volt base station equipment.
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